一种采用片上高介电常数电容器的高度小型化的移动通信设备接收机前端混合集成电路

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470985

T. Nakatsuka, J. Itoh, S. Yamamoto, T. Yoshida, M. Nishitsuji, T. Uda, K. Nishii, O. Ishikawa

{"title":"一种采用片上高介电常数电容器的高度小型化的移动通信设备接收机前端混合集成电路","authors":"T. Nakatsuka, J. Itoh, S. Yamamoto, T. Yoshida, M. Nishitsuji, T. Uda, K. Nishii, O. Ishikawa","doi":"10.1109/MCS.1995.470985","DOIUrl":null,"url":null,"abstract":"A highly miniaturized and low power consumption receiver front-end hybrid IC(HIC) including input matching circuits for 880 MHz bands using on-chip high-dielectric constant (/spl epsi//sub r/) capacitors has been newly developed. The HIC is composed of a GaAs IC chip and a ceramic substrate with spiral inductors on its surface. The HIC showed conversion gain of 20.2 dB and noise figure of 4.2 dB at supply voltage of 2.7 V and dissipation current of 3.7 mA. The HIC measures only 5.0 mm/spl times/5.0 mm/spl times/1.0 mm.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A highly miniaturized receiver front-end hybrid IC using on-chip high-dielectric constant capacitors for mobile communication equipment\",\"authors\":\"T. Nakatsuka, J. Itoh, S. Yamamoto, T. Yoshida, M. Nishitsuji, T. Uda, K. Nishii, O. Ishikawa\",\"doi\":\"10.1109/MCS.1995.470985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly miniaturized and low power consumption receiver front-end hybrid IC(HIC) including input matching circuits for 880 MHz bands using on-chip high-dielectric constant (/spl epsi//sub r/) capacitors has been newly developed. The HIC is composed of a GaAs IC chip and a ceramic substrate with spiral inductors on its surface. The HIC showed conversion gain of 20.2 dB and noise figure of 4.2 dB at supply voltage of 2.7 V and dissipation current of 3.7 mA. The HIC measures only 5.0 mm/spl times/5.0 mm/spl times/1.0 mm.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用片上高介电常数(/spl epsi//sub r/)电容，研制了一种包含880 MHz频段输入匹配电路的高小型化低功耗接收机前端混合集成电路(HIC)。该HIC由GaAs集成电路芯片和表面带有螺旋电感的陶瓷衬底组成。在电源电压为2.7 V、耗散电流为3.7 mA时，HIC的转换增益为20.2 dB，噪声系数为4.2 dB。HIC仅测量5.0 mm/spl次/5.0 mm/spl次/1.0 mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A highly miniaturized receiver front-end hybrid IC using on-chip high-dielectric constant capacitors for mobile communication equipment

A highly miniaturized and low power consumption receiver front-end hybrid IC(HIC) including input matching circuits for 880 MHz bands using on-chip high-dielectric constant (/spl epsi//sub r/) capacitors has been newly developed. The HIC is composed of a GaAs IC chip and a ceramic substrate with spiral inductors on its surface. The HIC showed conversion gain of 20.2 dB and noise figure of 4.2 dB at supply voltage of 2.7 V and dissipation current of 3.7 mA. The HIC measures only 5.0 mm/spl times/5.0 mm/spl times/1.0 mm.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

自引率

0.00%

发文量