一种新型的GaAs功率场效应管表面通孔制备工艺

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722690

H. Furukawa, T. Fukui, T. Tanaka, A. Noma, D. Ueda

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引用次数: 16

摘要

提出了一种简单的GaAs功率场效应管过孔制作新工艺。该工艺的特点是在晶圆表面刻蚀深沟槽，然后用保形电镀填充沟槽。表面过孔(SVH)是由极高速率ECR蚀刻。我们获得了超过4 /spl mu/m/min的刻蚀速率和完全各向异性的光滑轮廓。采用脉冲调制电镀的方法实现了沟槽周围的保形金属沉积。具有SVH的GaAs功率场效应管具有较好的线性度。目前的SVH工艺适用于几乎所有的GaAs场效应管或mmic，面积消耗非常小，适合大批量生产。

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A novel fabrication process of surface via-holes for GaAs power FETs

A simple new fabrication process of via-holes has been developed for GaAs power FETs. This process features deep trench etching from the wafer surface followed by refilling the trench by conformal electro-plating. The Surface Via-Hole (SVH) is engraved by extremely high rate ECR etching. We obtained the etching rate of over 4 /spl mu/m/min with a completely anisotropic smooth profile. The conformal metal deposition around the trench is achieved by pulse-modulated electro-plating. The GaAs power FET with SVH showed better linearity than the conventional wire-bonded one. The present SVH process is applicable to almost all the GaAs FETs or MMICs with very small area consumption and suitable for the high volume production.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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