使用超材料的射频MEMS可调谐带抑制滤波器

B. Pradhan, B. Gupta
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引用次数: 7

摘要

可调谐带阻滤波器是电子战中非常重要的组成部分。该设计采用MEMS技术,在硅衬底上的CPW传输线上采用互补分环谐振器(csrs)和RF MEMS可变电容,实现了与平面IC技术的兼容。csrs被蚀刻在CPW的信号线和接地面上。带阻滤波器的可调性是通过将MEMS桥置于上或下状态来实现的。通过静电驱动RF-MEMS开关电容,改变滤波器的电特性,使其谐振频率可调。在中心频率35.32GHz附近,下降状态抑制约为-20.19dB,在中心频率38.80GHz附近,上升状态抑制约为-18.29dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF MEMS tunable band reject filter using metamaterials
Tuneable band reject filter is a very critical component of electronic warfare. The design is of such a filter using MEMS technology presented on CPW transmission line on silicon substrate using Complementary Split Ring Resonators (CSRRs) and RF MEMS variable capacitor, enabling compatibility with planar IC technology. The CSRRs are etched on both the signal line and ground planes of the CPW. Tunability of the band reject filter is achieved by putting the MEMS bridge in either up or down state. Through electrostatic actuation of the RF-MEMS switched capacitor, the electrical characteristics of the filter is modified, so that its resonance frequency can be tuned. The rejection of stop bands are around -20.19dB for down state around the centre frequency 35.32GHz and -18.29dB for up state around the centre frequency 38.80GHz.
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