{"title":"一种集成850纳米光学器件的65纳米CMOS p阱/深n阱雪崩光电探测器","authors":"Quan Pan, Zhengxiong Hou, Yipeng Wang, C. Yue","doi":"10.1109/ASICON.2013.6811921","DOIUrl":null,"url":null,"abstract":"A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technology without any process modification. By adopting the lightly doped P-well as the P-terminal, a wider depletion region is achieved in a deeper position from the silicon surface. This photodetector achieves a -3-dB bandwidth of 1.1 GHz and a responsivity of 160 mA/W at 12.3 V with 850 nm light input. An integrated receiver using the proposed APD is able to operate at 4 Gbps.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 65-nm CMOS P-well/Deep N-well avalanche photodetector for integrated 850-nm optical\",\"authors\":\"Quan Pan, Zhengxiong Hou, Yipeng Wang, C. Yue\",\"doi\":\"10.1109/ASICON.2013.6811921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technology without any process modification. By adopting the lightly doped P-well as the P-terminal, a wider depletion region is achieved in a deeper position from the silicon surface. This photodetector achieves a -3-dB bandwidth of 1.1 GHz and a responsivity of 160 mA/W at 12.3 V with 850 nm light input. An integrated receiver using the proposed APD is able to operate at 4 Gbps.\",\"PeriodicalId\":150654,\"journal\":{\"name\":\"2013 IEEE 10th International Conference on ASIC\",\"volume\":\"178 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 10th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2013.6811921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6811921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 65-nm CMOS P-well/Deep N-well avalanche photodetector for integrated 850-nm optical
A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technology without any process modification. By adopting the lightly doped P-well as the P-terminal, a wider depletion region is achieved in a deeper position from the silicon surface. This photodetector achieves a -3-dB bandwidth of 1.1 GHz and a responsivity of 160 mA/W at 12.3 V with 850 nm light input. An integrated receiver using the proposed APD is able to operate at 4 Gbps.
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