一种有效频率为110 GHz的两步去嵌入方法

2017 29th International Conference on Microelectronics (ICM) Pub Date : 2017-12-01 DOI:10.1109/ICM.2017.8268811

J. Bazzi, H. Kassem, A. Curutchet, F. Pourchon, N. Derrier, D. Céli, T. Zimmer

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引用次数: 0

摘要

本文介绍了半导体工业中应用的不同的去嵌入方法，用于从晶圆上的高频s参数测量中获取器件的固有性能。提出了一种减少假人集的去嵌入方法，用于在千兆赫范围内进行精确的片上器件测量。在高达110GHz的器件上进行的实验结果表明，它与更复杂的器件相比具有相当的精度。

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A two-step de-embedding method valid up to 110 GHz

This paper presents different de-embedding methods applied in semiconductor industry, used to retrieve intrinsic device performances from high frequency S-parameters On-wafer measurement. A de-embedding method with a reduced set of dummies is proposed for conducting accurate on-wafer device measurement in the gigahertz range. The experimental results on a device characteristic up to 110GHz show that it has a comparable accuracy than a more complex one.

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2017 29th International Conference on Microelectronics (ICM)

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