应变SiO/ sub2 /对TDDB寿命预测的影响

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852831

Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari

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引用次数: 7

摘要

我们明确了应变sio /sub 2/对超薄栅极氧化物的时间依赖性介电击穿(TDDB)特性、氧化物击穿活化能和威布尔斜率(/spl beta/)的影响。基于扩展stillinger - weber势模型的考虑表明，SiO/sub - 2/内嵌压应变改变了Si-O-Si角的统计分布，导致T/sub - pd/减小，分布扩大。对于2 nm厚的SiO/ sub2 //Si体系，氧化物击穿倾向于发生在键角较低的Si- o -Si网络(/spl sim/115/spl°/)。

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Impacts of strained SiO/sub 2/ on TDDB lifetime projection

We clarify the effects of the strained-SiO/sub 2/ on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (/spl beta/) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO/sub 2/ changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T/sub pd/ and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (/spl sim/115/spl deg/) for the 2 nm-thick SiO/sub 2//Si system.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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