{"title":"用于低功耗智能LSI的可编程单电子晶体管逻辑","authors":"K. Uchida, J. Koga, R. Ohba, A. Toriumi","doi":"10.1109/ISSCC.2002.992194","DOIUrl":null,"url":null,"abstract":"Room-temperature-operating single-electron devices work not only as single-electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"58","resultStr":"{\"title\":\"Programmable single-electron transistor logic for low-power intelligent Si LSI\",\"authors\":\"K. Uchida, J. Koga, R. Ohba, A. Toriumi\",\"doi\":\"10.1109/ISSCC.2002.992194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Room-temperature-operating single-electron devices work not only as single-electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"58\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.992194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.992194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Programmable single-electron transistor logic for low-power intelligent Si LSI
Room-temperature-operating single-electron devices work not only as single-electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.