{"title":"利用传输线模型计算半导体激光器自发发射的空间依赖性","authors":"M. Razaghi, V. Ahmadi, B. Mahalleh, A. Zarifkar","doi":"10.1117/12.793314","DOIUrl":null,"url":null,"abstract":"In this paper we calculate the spatial dependency of the spontaneous emission in semiconductor laser cavity using a model based on transmission line laser method (TLLM). Results show that in the simple ridge laser structure, the major part of the spontaneous emission occurs at the middle of the cavity and so uniform spontaneous emission can't be assumed.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"780 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calculation of the spontaneous emission spatial dependency in semiconductor lasers using transmission line model\",\"authors\":\"M. Razaghi, V. Ahmadi, B. Mahalleh, A. Zarifkar\",\"doi\":\"10.1117/12.793314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we calculate the spatial dependency of the spontaneous emission in semiconductor laser cavity using a model based on transmission line laser method (TLLM). Results show that in the simple ridge laser structure, the major part of the spontaneous emission occurs at the middle of the cavity and so uniform spontaneous emission can't be assumed.\",\"PeriodicalId\":300417,\"journal\":{\"name\":\"Advanced Optoelectronics and Lasers\",\"volume\":\"780 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Optoelectronics and Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.793314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Optoelectronics and Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.793314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculation of the spontaneous emission spatial dependency in semiconductor lasers using transmission line model
In this paper we calculate the spatial dependency of the spontaneous emission in semiconductor laser cavity using a model based on transmission line laser method (TLLM). Results show that in the simple ridge laser structure, the major part of the spontaneous emission occurs at the middle of the cavity and so uniform spontaneous emission can't be assumed.