Cd2+离子对硬脂酸金属-绝缘体-半导体二极管交流电导率的影响

S. Malik, A. Ray
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引用次数: 0

摘要

本文报道了Cd2+离子对硬脂酸(SA)薄膜在金属-绝缘体-半导体(MIS)二极管结构中交流电学性能的影响。采用40层含Cd2+的SA Langmuir-Blodgett (LB)薄膜在疏水n型硅(n-Si)衬底上制备了绝缘薄膜。研究了Al/SA+Cd2+/Si MIS结构在80 kHz ~ 1 MHz的室温暗环境下的频率相关电容(C-f)和电导(G/ω-f)特性。含Cd2+的硬脂酸LB膜的电容量几乎与频率无关,表现为均匀的介电值。然而,在信号频率高于100khz时,薄膜的交流电导率表现出指数频率依赖行为。在高频范围内,金属绝缘体接触电阻占主导地位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Cd2+ ions on AC conductivity of stearic acid metal-insulator-semiconductor diode
We report on observations of the effect of Cd2+ ions on the AC electrical properties of stearic acid (SA) thin films in metal-insulator-semiconductor (MIS) diode-like structure. The insulating thin film was fabricated using 40-layers Langmuir-Blodgett (LB) films of SA containing Cd2+ ions on hydrophobic n-type silicon (n-Si) substrate. Frequency- dependent capacitance (C-f) and conductance (G/ω-f) characteristics of the Al/SA+Cd2+/Si MIS structure were investigated in dark at room temperature with frequency ranges from 80 kHz to 1 MHz. The capacitance for LB film of stearic acid with Cd2+ ions showed almost no frequency dependence which translated into uniform dielectric value. However, the film AC conductivity shown an exponential frequency-dependent behavior at a signal frequency higher than 100 kHz. The metal-insulator contact resistance is believed to be dominant in the high-frequency range.
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