用于模拟电路仿真的亚微米通道MOS晶体管跨导的紧凑模型

2007 International Symposium on Signals, Circuits and Systems Pub Date : 2007-07-13 DOI:10.1109/ISSCS.2007.4292673

G. Brezeanu, A. Sevcenco

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引用次数: 3

摘要

提出了一种估算亚微米MOS沟道跨导的解析模型。根据CMOS工艺和偏置电压，在速度饱和可以占主导地位或可忽略不计的条件下，模型是连续的。提出了描述饱和速度效应的新参数。

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A Compact Model of Submicron Channel MOS Transistor Transconductance for Analog Circuit Simulation

An analytical model to estimate the submicron MOS channel transconductance is presented. The model is continuous between conditions where velocity saturation can be either dominant or negligible, depending on the CMOS processes and bias voltages. New parameters are proposed for the description of the saturation velocity effects.

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来源期刊

2007 International Symposium on Signals, Circuits and Systems

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