多脉冲电磁辐照集成电路失效统计

K.B. Vasilyev, A. Klyuchnik, A. V. Solodov
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引用次数: 1

摘要

给出了电磁辐射下集成电路失效研究的结果。集成电路的损伤概率是电磁脉冲数N和辐射强度的函数。提出了损伤累积的理论模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The statistics of IC failures for multipulse electromagnetic irradiation
The results of integrated circuit (IC) failure investigation under electromagnetic irradiation are presented. The probability of IC damage is determined as a function of number of electromagnetic pulses N and intensity of radiation. A theoretical model of the damage accumulation is presented.
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