SRAM芯片读写控制系统的高级模型

Di Wang, Tiehu Li
{"title":"SRAM芯片读写控制系统的高级模型","authors":"Di Wang, Tiehu Li","doi":"10.1109/ICECE54449.2021.9674321","DOIUrl":null,"url":null,"abstract":"A high-level model of the read-write system for a synchronous-pipelined static random access memory (SRAM) was designed using Verilog hardware description language (HDL). The system is comprised of the host, the main controller and the SRAM chip, with the main controller further consisted of the signal source generator and the data transceiver controller. Three read-write modes, non-burst (regular), linear burst and interleaved burst, were realized in this model. The model was validated by behavioral simulations, which showed that the SRAM chip can be written and read correctly in all the operation modes. The SRAM read-write procedure is greatly simplified as the requirements for the source control signals are minimized. The stability and reliability of the system is improved by maximizing the timing margins of the data transmissions.","PeriodicalId":166178,"journal":{"name":"2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Level Model of the Read-Write Control System of a SRAM Chip\",\"authors\":\"Di Wang, Tiehu Li\",\"doi\":\"10.1109/ICECE54449.2021.9674321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-level model of the read-write system for a synchronous-pipelined static random access memory (SRAM) was designed using Verilog hardware description language (HDL). The system is comprised of the host, the main controller and the SRAM chip, with the main controller further consisted of the signal source generator and the data transceiver controller. Three read-write modes, non-burst (regular), linear burst and interleaved burst, were realized in this model. The model was validated by behavioral simulations, which showed that the SRAM chip can be written and read correctly in all the operation modes. The SRAM read-write procedure is greatly simplified as the requirements for the source control signals are minimized. The stability and reliability of the system is improved by maximizing the timing margins of the data transmissions.\",\"PeriodicalId\":166178,\"journal\":{\"name\":\"2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE54449.2021.9674321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE54449.2021.9674321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用Verilog硬件描述语言(HDL)设计了同步流水线静态随机存取存储器(SRAM)读写系统的高级模型。该系统由主机、主控制器和SRAM芯片组成,主控制器又由信号源发生器和数据收发控制器组成。该模型实现了非突发(规则)、线性突发和交错突发三种读写模式。通过行为仿真验证了该模型的有效性,结果表明该SRAM芯片在所有工作模式下都能正常读写。SRAM读写过程大大简化,因为对源控制信号的要求被最小化。通过最大化数据传输的时间余量,提高了系统的稳定性和可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High-Level Model of the Read-Write Control System of a SRAM Chip
A high-level model of the read-write system for a synchronous-pipelined static random access memory (SRAM) was designed using Verilog hardware description language (HDL). The system is comprised of the host, the main controller and the SRAM chip, with the main controller further consisted of the signal source generator and the data transceiver controller. Three read-write modes, non-burst (regular), linear burst and interleaved burst, were realized in this model. The model was validated by behavioral simulations, which showed that the SRAM chip can be written and read correctly in all the operation modes. The SRAM read-write procedure is greatly simplified as the requirements for the source control signals are minimized. The stability and reliability of the system is improved by maximizing the timing margins of the data transmissions.
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