G. Auriel, J. Dubuc, B. Sagnes, J. Oualid, G. Ghibaudo, P. Boivin
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New parameter extraction method for the simulation of the space charge created by Fowler-Nordheim electron injections in the gate oxide of MOS devices
A new procedure to analyze the oxide space charge created during a Fowler-Nordheim electron injection in metal-oxidesemiconductor devices is presented. This procedure was used to study the evolution of the centroid and the areal density relative to each component of the space charge with the electric field applied during the injection. The occupation probabilities of donor and acceptor like traps created in the oxide during stress are also determined.
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