一种用于700V高边极驱动集成电路的新型ESD自保护结构

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988880

Sunglyong Kim, D. LaFonteese, Danyang Zhu, D. Sridhar, S. Pendharkar, Hiromi Endoh, K. Boku

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引用次数: 10

摘要

提出了一种实现700V高侧栅极驱动集成电路自保护ESD结构的新概念，无需额外的工艺步骤和面积损失。通过仿真和实验验证了该装置的正确性。集成在高压电平转换器LDMOS中的寄生NPN结构，通过击穿后立即触发snapback，当ESD撞击相对于低压控制器的高侧驱动器部分时，LDMOS可以在安全操作区域内运行。新型ESD自保护LDMOS和高压结端结构结合寄生NPN, HBM ESD水平从1.4kV显著提高到6.8kV。

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A new ESD self-protection structure for 700V high side gate drive IC

A new concept to realize self-protected ESD structure for 700V high side gate drive IC without additional process steps and area penalty is presented. The device was verified by simulation and confirmed by experimental results. A parasitic NPN structure integrated in high voltage level shifter LDMOS enables LDMOS to be operated within safe operating area when ESD strikes the high side driver part with respect to the low voltage controller by triggering snapback right after breakdown. The new ESD self-protected LDMOS and high voltage junction termination structure in conjunction with parasitic NPN showed remarkable improvement in HBM ESD level from 1.4kV to 6.8kV.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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