对基于SiC技术的IGBT发展的贡献

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434589

M. Avram, G. Brezeanu, D. Poenar, M. Simion, C. Voitincu

{"title":"对基于SiC技术的IGBT发展的贡献","authors":"M. Avram, G. Brezeanu, D. Poenar, M. Simion, C. Voitincu","doi":"10.1109/ICM.2004.1434589","DOIUrl":null,"url":null,"abstract":"A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Contributions to development of IGBT on SiC technologies\",\"authors\":\"M. Avram, G. Brezeanu, D. Poenar, M. Simion, C. Voitincu\",\"doi\":\"10.1109/ICM.2004.1434589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.\",\"PeriodicalId\":359193,\"journal\":{\"name\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2004.1434589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2004.1434589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了在碳化硅(4H-SiC)上实现的绝缘栅双极晶体管的穿孔。IGBT芯片由一万个基本细胞并行连接而成。单元等效电路采用达灵顿结构的MOSFET和双极晶体管设计。本文提出的IGBT具有一个脱毛层(更便宜)，衬底和脱毛层之间有一个缓冲层以改善动态特性，并有一个保护环/脱毛层结以增加饱和电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Contributions to development of IGBT on SiC technologies

A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

自引率

0.00%

发文量