基于II-VI/III-N的微芯片绿黄激光转换器

2014 International Conference Laser Optics Pub Date : 2014-08-28 DOI:10.1109/LO.2014.6886289

S. Ivanov, S. Sorokin, S. Gronin, I. Sedova, A. G. Vainilovich, E. Lutsenko

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引用次数: 0

摘要

我们报告了安装在微芯片封装中的低阈值(nGaN LD)绿黄II-VI/III-N激光转换器的最新进展。讨论了进一步降低II-VI结构的阈值功率密度和将其波长扩展到黄色范围的新设计和技术方法。

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II-VI/III-N based micro-chip green-yellow laser converters

We report on recent progress in developing green-yellow II-VI/III-N laser converters comprising low-threshold (nGaN LD, mounted in a micro-chip package. Novel design and technological approaches in further reducing threshold power density of the II-VI structures and extending their wavelength to yellow range are discussed.

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2014 International Conference Laser Optics

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