一种确定LDD MOSFET的有效沟道长度和寄生串联电阻的替代方法

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004025

R. Torres‐Torres, R. Murphy‐Arteaga

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引用次数: 4

摘要

本文提出了一种测定MOSFET有效沟道长度和寄生源漏串联电阻的新方法。与以前报道的方法相比，这里提出的方法允许同时确定这些参数，并作为栅极电压的函数。该方法基于推导出的线性区域漏极电流关系的迭代解。用亚微米LDD mosfet的实验数据验证了该方法，并与先前发表的几种方法进行了比较。

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An alternative method to determine effective channel length and parasitic series resistance of LDD MOSFET's

A new method to determine MOSFET effective channel length and parasitic source/drain series resistance is presented in this paper. Compared to previously reported methods, the one presented here allows the determination of these parameters simultaneously and as a function of gate voltage. The method is based on the iterative solution of a derived linear-region drain current relation. The method is validated with experimental data taken from submicron LDD MOSFETs, and compared with several previously published methods.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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