28nm热加速老化过程的预测

Parvez Chanawala, Ian Hill, S. Sheikholeslam, A. Ivanov
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引用次数: 0

摘要

我们介绍了一种方法来预测SoC器件在热加速老化过程中的退化。soc通常在高温和电压(高于标称)下受力,以加速其老化,从而可以预测其在标称条件下的可靠性。这里我们关注热加速过程。我们实现了一个基于环形振荡器的测试结构,并将其自由运行频率作为测量退化的参考参数。我们在不同温度下分析了500小时bti诱导的降解行为,并观察到从实验的前半部分的测量可以自信地预测最终的降解。这一观察结果为预测可靠性测试结果提供了一种新的研究途径,例如持续1000小时并对产品上市时间产生负面影响的HTOL。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prediction of Thermally Accelerated Aging Process at 28nm
We introduce a methodology to predict degradation in an SoC device undergoing a thermally accelerated aging process. SoCs are usually stressed at high temperatures and voltages (above nominal) to accelerate their aging so that their reliability under nominal conditions can be predicted. Here we focus on the thermal acceleration process. We implement a ring oscillator-based test structure and consider its free-running frequency as our reference parameter to measure degradation. We analyze 500 hours of BTI-induced degradation behavior at different temperatures and observed that the final degradation can be confidently predicted from the measurements in first half of the experiment. This observation provides a new research avenue to predict reliability test results, such as HTOL, which lasts for 1000 hours and has a negative impact on the product’s time to market.
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