CdX-P3HT纳米复合材料的Johnson噪声

F. H. Naning, S. Malik, Koo Lee Feng, Wong Tze Jin, Y. P. Hung
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引用次数: 0

摘要

对纳米复合薄膜的约翰逊噪声进行了分析,以研究其作为电子器件元件的潜力和可靠性。纳米复合薄膜面临着许多挑战,如纳米颗粒在基质中的分散,这阻碍了它在潜在器件中的适用性、性能和性能。本文测量了两种方法制备的薄膜的约翰逊噪声和电流密度电压。第一类纳米复合材料是将CdS或CdSe纳米颗粒浸渍在共轭聚合物P3HT中,通过气体暴露。第二种是将CdS或CdSe量子点物理混合到P3HT中。两种纳米复合材料都采用朗缪尔层作为薄膜的基础。无论量子点或纳米颗粒负载如何,两种薄膜的约翰逊噪声都相对较小,当频率大于10 Hz时,约翰逊噪声均小于1× 10−27 A2/Hz。JV结果表明,P3HT内浸渍的纳米颗粒具有更好的电学性能。因此,通过气体暴露制备的纳米复合材料在电子器件中具有更好的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Johnson Noise of CdX-P3HT Nanocomposite
Johnson noise for nanocomposite thin films has been analyzed to study its potential and reliability as an element for electronic devices. Nanocomposite thin films face many challenges such as dispersion of nanoparticles in the matrix that hamper it suitability, competency and performance for potential devices. In this paper, the Johnson noise and current density-voltage has been measured for thin films fabricated through two different methods. The first type of nanocomposite is CdS or CdSe nanoparticles were impregnated in conjugated polymer, P3HT through gas exposure. The second type is by physically mixing CdS or CdSe quantum dots into P3HT. Both nanocomposites employ Langmuir layer as the basis of the film. The Johnson noise for both types of thin films are relatively small, less than 1× 10−27 A2/Hz for frequency more than 10 Hz, regardless of quantum dots or nanoparticles loading. The JV results show nanoparticles impregnated inside the P3HT have better electrical performance. Thus, the nanocomposites fabricated through gas exposure have better potential to be utilized in electronic devices.
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