{"title":"载波寿命对关断时间和关断损耗的影响","authors":"V. Temple, F. Holroyd, M. Adler, P. V. Gray","doi":"10.1109/PESC.1980.7089443","DOIUrl":null,"url":null,"abstract":"The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim. Difference in thyristor turn-off and diode turn-off in an inductive circuit and when driven by a perfect voltage source are investigated. A portion of this investigation was reported at the 1979 PESC.","PeriodicalId":227481,"journal":{"name":"1980 IEEE Power Electronics Specialists Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"“The effect of carrier lifetime profile on turn-off time and turn-off losses”\",\"authors\":\"V. Temple, F. Holroyd, M. Adler, P. V. Gray\",\"doi\":\"10.1109/PESC.1980.7089443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim. Difference in thyristor turn-off and diode turn-off in an inductive circuit and when driven by a perfect voltage source are investigated. A portion of this investigation was reported at the 1979 PESC.\",\"PeriodicalId\":227481,\"journal\":{\"name\":\"1980 IEEE Power Electronics Specialists Conference\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1980.7089443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1980.7089443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
“The effect of carrier lifetime profile on turn-off time and turn-off losses”
The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim. Difference in thyristor turn-off and diode turn-off in an inductive circuit and when driven by a perfect voltage source are investigated. A portion of this investigation was reported at the 1979 PESC.
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