室温下介电微腔中表现rabi分裂的激子极化子ΩR > 100 meV

2007 Quantum Electronics and Laser Science Conference Pub Date : 2007-05-06 DOI:10.1109/QELS.2007.4431627

J. Tischler, M. S. Bradley, Yasuhiro Shirasaki, V. Bulović

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引用次数: 0

摘要

在含有5 nm厚j聚集染料薄膜的平面溅射涂层介质微腔中，在室温下观察到激子-极化子态，激子层表现为rabi分裂ΩR > 100meV，空腔Q因子> 700。

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Exciton-polaritons at room temperature in dielectric microcavities exhibiting rabi-splitting ΩR ≫ 100 meV

Exciton-Polariton states are observed at room temperature in planar sputter-coated dielectric microcavities containing 5 nm thick film of J-aggregated dye as excitonic layer exhibiting Rabi-splitting Ω_R ≫ 100meV and empty cavity Q factor ≫> 700.

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2007 Quantum Electronics and Laser Science Conference

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