石墨烯蚀刻:如何蚀刻?

P. Pham
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引用次数: 4

摘要

背景:一种名为“石墨烯”的新型纳米材料由于其出色的机械、热、化学和物理特性而引起了人们的极大兴趣。直接采用化学气相沉积法或等离子体法刻蚀石墨烯,可以使石墨烯层更薄、表面更清洁,从而提高其电子学和光电子学性能,已成为研究热点。残留的杂质和表面的高粗糙度是由于石墨烯的性质导致性能恶化所致。通过表面清洁或等离子体相关的石墨烯蚀刻,通过逐层稀释的方法去除杂质,如自上而下的光刻。特别是,新型等离子体基石墨烯蚀刻在保持π结合的同时是自由的,这影响了它的导电性。目的:本文将介绍基于新兴策略的石墨烯蚀刻技术的最新进展。在此基础上,可应用于其他纳米材料的刻蚀。A R T I C L E H I S T O R Y收稿日期:2018年4月24日修稿日期:2018年6月20日收稿日期:2018年6月29日DOI: 10.2174/2452273202666180711103739
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphene Etching: How Could It Be Etched?
Background: A new nanomaterial species called “graphene” has been of great interest owing to its outstanding mechanical, thermal, chemistry, and physical characteristics. The etching either directly from chemical vapor deposition growth process or plasma technology process has been emerging as attracting research topic in achieving the thinner graphene layer and cleaner surface in order to improve their electronics and optoelectronics. The resided impurities and the high roughness surface are because of the nature of graphenes induced in deteriorating the performance. Removal of the impurities by surface cleaning or plasma-related graphene etching through the layer-by-layer thinning method as a top-down lithography. In particular, new plasma-based graphene etching is freedamage while maintaining its π-binding, which affects its conductivity. Objective: This mini-review will address the latest progress related to graphene etching technology based on emerging strategies. From here, it might be adopted in the etching of other nanomaterials. A R T I C L E H I S T O R Y Received: April 24, 2018 Revised: June 20, 2018 Accepted: June 29, 2018 DOI: 10.2174/2452273202666180711103739
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