碳化硅双极结晶体管的静态和动态特性

IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468) Pub Date : 2003-11-02 DOI:10.1109/IECON.2003.1280219

A. Claudio, Hongfang Wang, A.Q. Huang, A. Agarwal

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引用次数: 3

摘要

碳化硅(SiC)具有较宽的带隙，是一种很有前途的材料。近年来，基于碳化硅的半导体器件已被开发用于高数据电压、高温和高辐射条件下。本文的目的是介绍高压SiC双极结晶体管(BJT)的研究，特别是基极和集电极区域的少数载流子寿命的估计。提出了碳化硅BJT低增益的原因。

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Static and dynamic characterization of silicon carbide bipolar junction transistor

Silicon carbide (SiC) is a very promising material because of its wide bandgap. Recently, semiconductor devices based on SiC have been developed for use in high data voltage, high temperature and high radiation conditions. The purpose of this paper is to present the study of high-voltage SiC bipolar junction transistor (BJT), in particular the estimation of the minority carrier lifetime in the base and in the collector regions. The causes of SiC BJT's low gain are also proposed.

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来源期刊

IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)

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