基于Ta2O5/Ta层的神经网络突触单元交叉点器件

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437429

R. Tanaka, Isao Horiuchi, Yukio Mogi, Y. Hiroshima, Y. Nakashima, M. Kimura

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引用次数: 0

摘要

我们开发了一种使用Ta2O5/Ia层的交叉点器件，用于神经网络中的突触元件。水平80和垂直80铂线以及它们之间的Ta2O5/Ia层在玻璃基板上集成了6400个交叉点突触。电导率随电流的增加而逐渐降低，可用于改进的Hebbian学习。我们发现使用交叉点突触的神经网络能够识别多个字母。

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Cross-Point Device using Ta2O5/Ta Layer for Synapse Element in Neural Network

We have developed a cross-point device using a Ta2O5/Ia layer for synapse elements in neural networks. Horizontal 80 and vertical 80 platinum lines and a Ta2O5/Ia layer between them make 6400 cross-point synapses integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning. We found that a neural network using the cross-point synapses are able to recognize multiple letters.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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