生长表面的光学监测-反射-差分光谱学

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328309

I. Kamiya

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引用次数: 0

摘要

由于光学探针的发展，有机金属化学气相沉积(OMCVD)过程中的表面结构监测现在已经成为可能。反射率-差谱分析(RDS)表明，在OMCVD条件下，(001)GaAs表面重建成与分子束外延(MBE)过程中超高真空中相似或相同的结构。在这里，作者回顾了最近使用RDS和互补技术(如掠入射x射线散射)对OMCVD和MBE生长的实时研究。

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Optical monitoring of growth surfaces-reflectance-difference spectroscopy

Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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