14v /sub / 10gbit /s E/O调制器驱动IC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964394

J. Carroll, C. Campbell

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引用次数: 3

摘要

介绍了一种高电压、宽带E/O调制器驱动集成电路的研制。该直流耦合单端放大器具有11.5 GHz的3db带宽，9.5 dB小信号增益和14v /sub /输出电压摆幅。该IC采用0.25 /spl mu/m pHEMT生产工艺，为10gbit /s高压E/O调制器应用提供足够的带宽和输出功率。

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A 14-V/sub pp/ 10 Gbit/s E/O modulator driver IC

The development of a high voltage, wideband E/O modulator driver IC is described. The DC coupled, single-ended amplifier exhibits a 3 dB-bandwidth of 11.5 GHz, 9.5 dB small signal gain, and 14-V/sub pp/ output voltage swing. The IC utilizes a 0.25 /spl mu/m pHEMT production process and provides sufficient bandwidth and output power for 10 Gbit/s high voltage E/O modulator applications.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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