带单晶体管辅助缓冲器的宽负载范围混合模式LDO稳压器

Ning Zhang, Chenchang Zhan, Han Li, Linjun He
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引用次数: 0

摘要

本文提出了一种具有单晶体管辅助缓冲和模数混合模式控制的宽负载范围低差(LDO)稳压器。单晶体管辅助pmos输入单位增益缓冲器可以延长模拟功率晶体管的栅极电压范围,并保证LDO稳压器即使在非常小的负载电流下也能很好地工作。为了扩展大负载电流的负载能力,采用混合模式控制来检测大负载并接通或关闭数字功率晶体管,从而为负载提供大电流和更好的面积效率。在数字辅助下,LDO稳压器具有更好的负载调节能力和重载负载能力。所提出的LDO稳压器的概念验证设计已经在标准的$0.18-\mu \ mathm {m}$ CMOS工艺中实现和制造。它占用的活动区域只有$0.01 \ mathm {m}\ mathm {m}^{2}$。随着负载电流从0 mA到150 mA的步进,与没有数字辅助的设计相比,所提出的带有数字辅助的LDO稳压器实现了超过50%的下垂电压降低。在数字辅助和单晶体管辅助缓冲器的帮助下,该设计实现了0.21 mV/mA的负载调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Wide-Load-Range Mixed-Mode LDO Regulator with Single-Transistor-Assisted Buffer
A wide-load-range low-dropout (LDO) regulator with single-transistor-assisted buffer and analog-digital mixed-mode control is presented in this paper. The single-transistor-assisted PMOS-input unity-gain-buffer can extend the gate voltage range of the analog power transistor and guarantee that the proposed LDO regulator can work well even at very light load current. To extend the loading capability for large load current, a mixed-mode control is used to detect heavy load and turn on or off the digital power transistor which provides large current to the load with better area efficiency. With the digital assistance, the proposed LDO regulator has better load regulation and loading capability at heavy load as well. A proof-of-concept design of the proposed LDO regulator has been implemented and fabricated in a standard $0.18-\mu \mathrm {m}$ CMOS process. It occupies an active area of only $0.01 \mathrm {m}\mathrm {m}^{2}$. With the load current step from 0 mA to 150 mA, the proposed LDO regulator with digital assistance achieves a droop voltage reduction of more than 50% compared to the design without the digital assistance. A load regulation of 0.21 mV/mA is achieved by the proposed design with the help of the digital assistance and single-transistor-assisted buffer.
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