W. Knap, Y. Deng, V. Kachorovskii, S. Rumyantsev, M. Shur
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Detection of terahertz radiation by plasma waves in field effect transistors
We review our recent experimental and theoretical studies of the detection of terahertz radiation in GaAs/AlGaAs heterostructure field effect transistors (FET's) in a wide range of temperatures (8-300 K) and for frequencies ranging from 0.1 THz to 0.6 THz. The resonant detection of 0.6 THz radiation by the two-dimensional electron plasma confined in 0.15 /spl mu/m gate length GaAs/AlGaAs field effect transistors is demonstrated.
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