一种可扩展BST电容器的新电池技术，使用大马士革形成的基座电极和[Pt-Ir]合金涂层

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852788

H. Itoh, Y. Tsunemine, A. Yutani, T. Okudaira, K. Kashihara, M. Inuishi, M. Yamamuka, T. Kawahara, T. Horikawa, T. Ohmori, S. Satoh

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引用次数: 1

摘要

通过将damascene方案引入基座电极形成，并采用[Pt-Ir]合金涂覆基座电极，成功地开发了用于BST电容器的可扩展基座电池技术。采用PVD-BST衬里作为包层成核层和抗氧化剂屏障层，使MOCVD-BST在开发的存储节点上处于最佳状态。

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A new cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

A scalable pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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