高光效白光led的性能

K. Band
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引用次数: 9

摘要

综述了用于照明应用的InGaN/YAG白光led的性能。先进的小芯片技术,通过提高内部效率、提取效率和电阻,实现了近200lm/W的高光效白光LED。此外,采用大芯片技术,还开发了倒装阵列的10000 lm高光通量器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance of High-luminous Efficacy White LEDs
The performance of InGaN/YAG white LEDs for lighting applications is reviewed. Advanced small-chip-technology has achieved high-luminous efficacy white LED of almost 200lm/W by improving internal efficiency, extraction efficiency and electrical resistance. In addition, high-luminous flux device of 10,000lm by flip-chip array has been also developed by large-chip-technology.
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