{"title":"定制制造高q模拟双间隙RF MEMS变容管","authors":"G. McFeetors, M. Okoniewski","doi":"10.1109/MIKON.2006.4345127","DOIUrl":null,"url":null,"abstract":"An RF MEMS capacitor design, fabrication and measurement is described. The capacitor's dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.","PeriodicalId":315003,"journal":{"name":"2006 International Conference on Microwaves, Radar & Wireless Communications","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors\",\"authors\":\"G. McFeetors, M. Okoniewski\",\"doi\":\"10.1109/MIKON.2006.4345127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An RF MEMS capacitor design, fabrication and measurement is described. The capacitor's dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.\",\"PeriodicalId\":315003,\"journal\":{\"name\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2006.4345127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microwaves, Radar & Wireless Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2006.4345127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors
An RF MEMS capacitor design, fabrication and measurement is described. The capacitor's dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.
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