Ti层厚度对Ti- alcu金属化电迁移性能的影响

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670665

M. Hosaka, T. Kouno, Y. Hayakawa, H. Niwa, M. Yamada

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引用次数: 7

摘要

在用w型插头连接的两级互连结构上，对不同上Ti膜厚度的TiN-Ti-AlCu-TiN-Ti堆叠结构进行了电迁移寿命试验。我们发现薄钛具有很高的电迁移电阻，形成岛状的Al/sub - 3/Ti金属间化合物。这一结果与一个众所周知的旁路模型不一致。我们提出了一个新的模型，其中Al/sub - 3/Ti-Al界面的传质速度比其他模型快。

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Ti layer thickness dependence on electromigration performance of Ti-AlCu metallization

Electromigration lifetime tests on TiN-Ti-AlCu-TiN-Ti stacked structures with various upper Ti film thicknesses have been carried out on two-level interconnect structures connected with W-plugs. We found that a high electromigration resistance was obtained with thin Ti, resulting in an island shaped Al/sub 3/Ti intermetallic. This result is inconsistent with a well-known bypass model. We propose a new model in which the Al/sub 3/Ti-Al interface mass transport is faster than that of others.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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