用于Si, SiC和GaN器件的NPC和t型三电平变换器的损耗分析

K. Kumari, Swagata Mapa, R. Maheshwari
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引用次数: 6

摘要

与双电平变换器相比,多电平变换器具有低谐波和减少开关损耗的显著优点,因此得到了广泛的应用。本文对中性点箝位变换器(NPC)和t型变换器两种三电平逆变器拓扑的损耗进行了比较评估。损耗分析是基于硅(Si)、碳化硅(SiC)和氮化镓(GaN)等不同器件的两种拓扑结构进行的。在不同的开关频率和负载条件下,对两种拓扑下的开关和二极管进行了损耗击穿分析。评估主要借助MATLAB和LTSpice完成。比较了两种拓扑结构下不同开关频率下的损耗。仿真得到的损耗估计结果与m文件的估计结果基本一致。结果表明,GaN和SiC基变换器比Si基NPC和t型变换器效率更高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Loss Analysis of NPC and T-Type Three-Level Converter for Si, SiC, and GaN based Devices
Multilevel converters are widely used for its significant benefit of low harmonics and reduced switching losses compared to two-level converter. This paper presents a comparative evaluation of loss of two three-level inverter topologies, namely Neutral Point Clamped Converter (NPC) and T-type converter. The loss analysis are done for both topologies based on different devices like Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN). Loss breakdown analysis for each switches and diodes in both topology are presented for different switching frequency and loading condition. Evaluation is mainly done with the help of MATLAB, and LTSpice. Comparison of losses for different switching frequency for different switches are done for both topologies. The result of loss estimation obtained from simulation and m-file is approximately the same. The result shows that GaN and SiC based converter is more efficient than Si based NPC and T-Type converter.
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