一种新的可调谐低噪声放大器的设计方法

M. B. Yelten, K. Gard
{"title":"一种新的可调谐低噪声放大器的设计方法","authors":"M. B. Yelten, K. Gard","doi":"10.1109/WAMICON.2009.5207313","DOIUrl":null,"url":null,"abstract":"A novel design methodology for tunable low noise amplifiers with the associated circuit topology will be presented. The procedure steps based on low noise design essentials are given as the main results of their mathematical analysis using the circuit and noise theory. After the methodology is demonstrated at narrowband by the simulation graphs, the tunability aspect of the design using the series matching at the input and output will be verified. If a tunable capacitor is inserted to the base of the heterojunction bipolar transistor (HBT) at the input, simulation outcomes reveal that for the range of 3.5– 6.5 GHz, input and output return ratios (S11 and S22) can be ensured to be below –10 dB and the difference between noise figure (NF) and minimum noise figure (NFMIN) to be below 0.5 dB.","PeriodicalId":132141,"journal":{"name":"2009 IEEE 10th Annual Wireless and Microwave Technology Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A novel design procedure for tunable low noise amplifiers\",\"authors\":\"M. B. Yelten, K. Gard\",\"doi\":\"10.1109/WAMICON.2009.5207313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel design methodology for tunable low noise amplifiers with the associated circuit topology will be presented. The procedure steps based on low noise design essentials are given as the main results of their mathematical analysis using the circuit and noise theory. After the methodology is demonstrated at narrowband by the simulation graphs, the tunability aspect of the design using the series matching at the input and output will be verified. If a tunable capacitor is inserted to the base of the heterojunction bipolar transistor (HBT) at the input, simulation outcomes reveal that for the range of 3.5– 6.5 GHz, input and output return ratios (S11 and S22) can be ensured to be below –10 dB and the difference between noise figure (NF) and minimum noise figure (NFMIN) to be below 0.5 dB.\",\"PeriodicalId\":132141,\"journal\":{\"name\":\"2009 IEEE 10th Annual Wireless and Microwave Technology Conference\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 10th Annual Wireless and Microwave Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WAMICON.2009.5207313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 10th Annual Wireless and Microwave Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAMICON.2009.5207313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

一种新颖的设计方法,可调谐低噪声放大器与相关的电路拓扑结构将提出。给出了基于低噪声设计要点的程序步骤,并运用电路和噪声理论对其进行了数学分析。通过仿真图在窄带上演示了该方法后,将验证在输入和输出处使用串联匹配的设计的可调性方面。仿真结果表明,在3.5 ~ 6.5 GHz范围内,如果在异质结双极晶体管(HBT)的输入端插入可调谐电容,则可以确保输入输出返回比(S11和S22)低于- 10 dB,噪声系数(NF)和最小噪声系数(NFMIN)之间的差值低于0.5 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel design procedure for tunable low noise amplifiers
A novel design methodology for tunable low noise amplifiers with the associated circuit topology will be presented. The procedure steps based on low noise design essentials are given as the main results of their mathematical analysis using the circuit and noise theory. After the methodology is demonstrated at narrowband by the simulation graphs, the tunability aspect of the design using the series matching at the input and output will be verified. If a tunable capacitor is inserted to the base of the heterojunction bipolar transistor (HBT) at the input, simulation outcomes reveal that for the range of 3.5– 6.5 GHz, input and output return ratios (S11 and S22) can be ensured to be below –10 dB and the difference between noise figure (NF) and minimum noise figure (NFMIN) to be below 0.5 dB.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信