在云I/O中使用Active NVRAM

Sudarsun Kannan, D. Milojicic, V. Talwar, Ada Gavrilovska, K. Schwan, H. Abbasi
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引用次数: 7

摘要

对于大规模云应用程序来说,一个众所周知的问题是如何扩展它们的I/O性能。虽然像相变存储器和忆阻器这样的下一代存储类存储器提供了高I/O带宽的潜力,但如果不加以控制,当前云应用程序中已经存在的原始I/O容量和速率可能会很快淹没未来的I/O基础设施。这一事实激发了对“数据分段”的研究,在“数据分段”中,I/O和数据移动动作通过在I/O通道中移动数据之前或同时进行的计算来增强,以过滤或减少数据,以便更好地组织数据以供后续访问(例如,通过耦合代码中的其他应用程序),或者对其进行分析以快速获得有关产生这些大数据量的应用程序的重要见解。本文提出了一种使用和利用“活动NVRAM”(非易失性存储器)进行暂存I/O的技术。有源nvram是节点本地nvram,它嵌入了一个低功耗的片上系统计算元件。这些活动计算元素可用于与计算节点元素执行的任务异步操作输出数据、减少数据或在数据移动到长期存储之前执行数据分析所需的一些数据处理。本文介绍了Active NVRAM的设计,它用于I/O加速的示例方法,以及评估Active NVRAM方法的机会和局限性的初始性能结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using Active NVRAM for Cloud I/O
A well-known problem for large scale cloud applications is how to scale their I/O performance. While next generation storage class memories like phase change memory and Memristors offer potential for high I/O bandwidths, if left unchecked, the raw volumes and rates of I/O already present in current cloud applications can quickly overwhelm future I/O infrastructures. This fact is motivating research on 'data staging' in which I/O and data movement actions are enhanced with computations that process data before or while moving it across I/O channels -- in situ -- to filter or reduce it, to better organize it for subsequent access (e.g., by other applications as in coupled codes), or to analyze it to quickly derive important insights about the application producing those large data volumes. This paper proposes a technique that uses and exploits 'Active NVRAM' (non volatile memory) for staging I/O. Active NVRAMs are node-local NVRAMs that are embedded with a low power system-on-chip compute element. These active compute elements can be used to operate on output data asynchronously with the tasks performed by computational node elements, to reduce data or to perform some of the data processing required for data analytics before data is moved to longer term storage. The paper describes the Active NVRAM design, sample ways in which it is used for I/O acceleration, and initial performance results evaluating the opportunities for and limitations of the Active NVRAM approach.
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