数据速率为8mb /s的512mb NROM闪存

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992958

E. Maayan, R. Dvir, J. Shor, Y. Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E.S. v Kamienski, P. Haibach, D. Caspary, Sebastian Riedel, R. Knofler

{"title":"数据速率为8mb /s的512mb NROM闪存","authors":"E. Maayan, R. Dvir, J. Shor, Y. Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E.S. v Kamienski, P. Haibach, D. Caspary, Sebastian Riedel, R. Knofler","doi":"10.1109/ISSCC.2002.992958","DOIUrl":null,"url":null,"abstract":"The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 512 Mb NROM flash data storage memory with 8 MB/s data rate\",\"authors\":\"E. Maayan, R. Dvir, J. Shor, Y. Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E.S. v Kamienski, P. Haibach, D. Caspary, Sebastian Riedel, R. Knofler\",\"doi\":\"10.1109/ISSCC.2002.992958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"216 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.992958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.992958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

NROM技术应用于EEPROM、闪存和数据存储产品系列。所有产品都基于每单元2位的核心技术，使用共同的设计概念、算法、电路和相同的工艺架构。不同的产品需求强调了概念的多功能性。

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A 512 Mb NROM flash data storage memory with 8 MB/s data rate

The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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