{"title":"隧道用窄带隙半导体的研究","authors":"D. Pan, N. Lee","doi":"10.1109/ICSWA.1981.9335114","DOIUrl":null,"url":null,"abstract":"The potential of abrupt junction TUNNETT diodes made from narrow band gap semiconductor for millimeter wave frequency are explored theoretically. The alloy compound Hg1-xCdxTe which has a tunable band gap is chosen in this study. Neglecting impact ionization, an efficiency of 2.5% is obtained at 94 GHz in the simulation with a band-gap of 0.41 eV. We suggest that narrow band gap semiconductors have good potential for fabricating diodes operating in the TUNNETT or MITATT modes for millimeter wave applications.","PeriodicalId":254777,"journal":{"name":"1981 International Conference on Submillimeter Waves and Their Applications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Narrow Band-Gap Semiconductors for Tunnetts\",\"authors\":\"D. Pan, N. Lee\",\"doi\":\"10.1109/ICSWA.1981.9335114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential of abrupt junction TUNNETT diodes made from narrow band gap semiconductor for millimeter wave frequency are explored theoretically. The alloy compound Hg1-xCdxTe which has a tunable band gap is chosen in this study. Neglecting impact ionization, an efficiency of 2.5% is obtained at 94 GHz in the simulation with a band-gap of 0.41 eV. We suggest that narrow band gap semiconductors have good potential for fabricating diodes operating in the TUNNETT or MITATT modes for millimeter wave applications.\",\"PeriodicalId\":254777,\"journal\":{\"name\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSWA.1981.9335114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 International Conference on Submillimeter Waves and Their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSWA.1981.9335114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of Narrow Band-Gap Semiconductors for Tunnetts
The potential of abrupt junction TUNNETT diodes made from narrow band gap semiconductor for millimeter wave frequency are explored theoretically. The alloy compound Hg1-xCdxTe which has a tunable band gap is chosen in this study. Neglecting impact ionization, an efficiency of 2.5% is obtained at 94 GHz in the simulation with a band-gap of 0.41 eV. We suggest that narrow band gap semiconductors have good potential for fabricating diodes operating in the TUNNETT or MITATT modes for millimeter wave applications.
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