InP数字光开关

Applications of Photonic Technology Pub Date : 2003-02-01 DOI:10.1117/12.474049

P. Barrios, P. Poole, M. Buchanan, P. Chow-Chong, I. Golub, C. Lacelle, B. Syrett, S. Abdalla, S. El-Mougy

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引用次数: 1

摘要

我们展示了基于载流子注入和量子受限Stark效应的InP上的数字光开关(DOS)。有源波导核心由用于载流子注入的InGaAsP双异质结构或用于反向偏置操作的InGaAs-InGaAsP组成。o离子注入被用来分离DOS分支，而不是通常的蚀刻分离。

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InGaAsP digital optical wwitch on InP

We demonstrate Digital Optical Switches (DOS) on InP based on carrier-injection and on the quantum-confined Stark effect (QCSE). The active waveguide core is composed of either a double-heterostructure of InGaAsP for carrier-injection or a InGaAs-InGaAsP for reverse bias operation. O-Ion implantation was employed to isolate the branches of the DOS instead of the usual isolation by etching employed elsewhere.

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Applications of Photonic Technology

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