Work-function modulated hetero gate charge plasma TFET to enhance the device performance

In this paper a simulated device configuration is introduced for doping less charge plasma tunnel FET (CP-TFET) to improving the drain current and ambipolar nature. To achieve these improvements, we have proposed drain electrode work-function modulation engineering along with hetero dielectric in CP-TFET. The use of varied work-function modulation technique in drain region significantly reduces the ambipolar current by modifying the tunneling barrier width at the proximity of drain junction. However, the combined effect of hetero dielectric with drain electrode work-function modulation results in improved ON-current $(\mathrm{I}_\mathrm{ON})$ and reduced ambipolar-current (IAMB). The paper presents a comparative DC analysis of drain work-function modulated hetero gate charge plasma TFET (DWM-HCP-TFET) with that of conventional charge plasma TFET (CP-TFET). Analysis is done to prove the superiority of DWM-HCP-TFET over the conventional model.