从多尺度模型表征DGFET的特性:氧化物厚度和温度的影响

Ahmed‐Ali Kanoun, S. Goumri‐Said
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引用次数: 1

摘要

在MOSFET器件技术中,当传统的平面MOSFET的沟道长度和尺寸缩小到更短时,严重的短沟道效应开始显现,这就带来了许多困难。替代器件的研究导致了FinFet的发明,FinFet被认为是传统平面MOSFET的一种变体,但更能适应短通道效应。在这项工作中,我们的重点是对称双栅场效应管(SDGFET)使用漂移扩散模型,自一致地解决。该模型是为纳米器件中的带电粒子运动方程设计的,其中考虑了量子约束、扩散输运和静电相互作用等重要效应。研究发现,SDGFET的特性取决于不同的参数,特别是氧化层的厚度和最重要的外部参数:温度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of DGFET properties from multiscale modeling: Effects of oxide thickness and temperature
In MOSFET devices technology, many difficulties arise when severe short channel effects begin to show up when the channel lengths and dimension of the conventional planar MOSFET are scaled down to shorter. The research of alternate device has results on the invention of the FinFet, considered as a variant of the conventional planar MOSFET but more resilient to short channel effects. In this work, we focus on the symmetrical double gate FET (SDGFET) using a Drift-Diffusion model, resolved self-consistently. This model was designed for charged particles motion equation in nanodevices, where important effects such as quantum confinement, diffusive transport and electrostatic interaction are considered. It is found that the characteristic of the SDGFET is depending on different parameters, in particular the thickness of the oxide layer and also the most important external parameter: temperature.
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