电阻式随机存取存储器的低功耗混合可重构架构

M. Lastras-Montaño, A. Ghofrani, K. Cheng
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引用次数: 13

摘要

无通路晶体管记忆交叉栅已被证明是下一代非易失性存储器的优秀候选人。虽然每个存储器元件晶体管的消除可以实现更高的存储器密度,但它也会在存储器正常工作期间引入寄生电流,从而增加交叉杆的总体功耗和线路驱动器的电流要求。在这项工作中,我们提出了一种混合可重构存储器架构,该架构利用了互补电阻开关(CRS)既可以作为忆阻器又可以作为CRS的事实。通过动态地将内存的频繁访问区域保持在忆阻模式下,而将其他区域保持在CRS模式下,我们的混合内存提供了忆阻器和CRS各自提供的所有优点,而没有任何缺点。我们使用SPEC CPU2006基准测试验证了我们的架构,并发现我们的混合内存相对于纯记忆内存平均节省3.6倍的能源。此外,我们可以提供比仅crs内存平均长6.4倍的内存寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-power hybrid reconfigurable architecture for resistive random-access memories
Access-transistor-free memristive crossbars have shown to be excellent candidates for next generation non-volatile memories. While the elimination of the transistor per memory element enables higher memory densities, it also introduces parasitic currents during the normal operation of the memory that increases both the overall power consumption of the crossbar, and the current requirements of the line drivers. In this work we present a hybrid reconfigurable memory architecture that takes advantage of the fact that a complementary resistive switch (CRS) can behave both as a memristor and as a CRS. By dynamically keeping frequently accessed regions of the memory in the memristive mode and others in the CRS mode, our hybrid memory offer all the benefits that a memristor and a CRS offer individually, without any of their drawbacks. We validate our architecture using the SPEC CPU2006 benchmark and found that our hybrid memory offers average energy savings of 3.6x with respect to a memristive-only memory. In addition, we can offer a memory lifetime that is, on average, 6.4x longer than that of a CRS-only memory.
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