GaN HEMT的开关瞬态分析与表征

2018 3rd International Conference on Intelligent Green Building and Smart Grid (IGBSG) Pub Date : 2018-04-01 DOI:10.1109/IGBSG.2018.8393542

B. Sun, Zhe Zhang, M. Andersen

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引用次数: 8

摘要

高电子迁移率晶体管(HEMT)具有开关速度快、功耗低、封装设计小等优点。氮化镓(GaN) HEMT近年来得到了广泛的研究。准确的表征和详细的开关分析对于功率变换器的实际应用至关重要。本文采用双脉冲测试仪对650V GaN HEMT进行了测试。在实验结果的基础上，给出了开关暂态分析，并对米勒高原漂移现象进行了解释。给出了开关时间和开关损耗特性，作为变换器设计的参考值。

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Switching transient analysis and characterization of GaN HEMT

High electron mobility transistor (HEMT) has the advantage of fast switching capability, low power loss and small package design. Gallium Nitride (GaN) HEMT is widely researched in recent years. Accurate characterization and detailed switching analysis are critical for the practical application in power converters. In this paper, a 650V GaN HEMT is tested based on the double pulse tester. Based on the experimental results, the switching transient analysis is given and the phenomenon of Miller plateau shifting is explained. Switching time and switching loss characterization are given as the reference value for converter design.

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2018 3rd International Conference on Intelligent Green Building and Smart Grid (IGBSG)

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