HKMG SiGe GF FDSOI p- mosfet和RMG p- finfet中NBTI的工艺(Ge, N)依赖性和机械应变影响建模

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551724

N. Parihar, R. Tiwari, C. Ndiaye, M. Arabi, S. Mhira, H. Wong, S. Motzny, V. Moroz, V. Huard, S. Mahapatra

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引用次数: 12

摘要

使用物理框架来模拟Si和SiGe FDSOI p- mosfet和p- finfet负偏置温度不稳定性(NBTI)的时间动力学。解释了锗(Ge%)和氮(N%)在高钾金属栅栅堆中的作用。对FDSOI的STI对主动距离(SA)的机械应变效应和FinFET的通道长度(L)缩放进行了解释。计算能带结构以关联工艺(Ge%， N%，应变)对器件退化的影响。该模型包含在Sentaurus Device TCAD中，用于预测Si和SiGe finfet中的NBTI动力学。

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Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs

A physical framework is used to model time kinetics of Negative Bias Temperature Instability (NBTI) in Si and SiGe FDSOI p-MOSFETs and p-FinFETs. The effects of Germanium (Ge%) in the channel and Nitrogen (N%) in the High-K Metal Gate (HKMG) gate stack are explained. Mechanical strain effects in terms of STI to active distance (SA) for FDSOI and channel length (L) scaling for FinFET are explained. Band structure is calculated to correlate the process (Ge%, N%, strain) impact on device degradation. The model is included in Sentaurus Device TCAD to predict NBTI kinetics in Si and SiGe FinFETs.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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