{"title":"超低噪声高线性集成1.5至2.7 GHz LNA","authors":"Jingshi Yao, Xiaopeng Sun, B. Lin","doi":"10.1109/IEEE-IWS.2013.6616720","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2×2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA\",\"authors\":\"Jingshi Yao, Xiaopeng Sun, B. Lin\",\"doi\":\"10.1109/IEEE-IWS.2013.6616720\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2×2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.\",\"PeriodicalId\":344851,\"journal\":{\"name\":\"2013 IEEE International Wireless Symposium (IWS)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2013.6616720\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2013.6616720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA
This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2×2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
