一种具有电压偏置自参考传感的高密度高速1T-4MTJ MRAM

2006 IEEE Asian Solid-State Circuits Conference Pub Date : 2006-11-01 DOI:10.1109/ASSCC.2006.357911

H. Tanizaki, T. Tsuji, J. Otani, Y. Yamaguchi, Y. Murai, H. Furuta, S. Ueno, T. Oishi, M. Hayashikoshi, H. Hidaka

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引用次数: 36

摘要

提出了一种用于磁随机存取存储器(MRAM)的高密度高速存储单元，称为1晶体管4磁隧道结(1T-4MTJ)。新的1T-4MTJ电池已经通过1mb MRAM测试设备成功验证，使用130纳米CMOS工艺。具有电压偏移(SRSV)的自参考感测放大器的感测方案实现了tAC=56 nsec和50 MHz@4cycle的高速存储器操作(访问时间)。

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A high-density and high-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme

A high-density and high-speed memory cell named 1-transistor 4-magnetic tunnel junction (1T-4MTJ) has been proposed for magnetic random access memory (MRAM). The new 1T-4MTJ cell has been successfully demonstrated by a 1 Mb MRAM test device, using a 130 nm CMOS process. The sensing scheme of a self-reference sense amplifier with Voltage offset (SRSV) enables high-speed memory operation (access time) of tAC=56 nsec and 50 MHz@4cycle.

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2006 IEEE Asian Solid-State Circuits Conference

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