采用90nm CMOS技术的负变容管的80GHz压控振荡器

W. Chaivipas, K. Okada, A. Matsuzawa
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引用次数: 3

摘要

介绍了一种80ghz压控振荡器。结果表明,阻抗变换使变容电容变为负变容电容,部分抵消了差分对的电容。这使得传输线谐振器更长,具有更高的阻抗。提出了实现负变容管的设计准则,并讨论了毫米波压控振荡器的设计问题。该压控振荡器采用90 nm CMOS技术制造,在1.2 V电源下,在10 MHz偏移时相位噪声为-109 dBc/Hz,功耗为13 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 80GHz voltage controlled oscillator utilizing a negative varactor in 90nm CMOS technology
A 80 GHz voltage controlled oscillator is presented. It is shown that impedance transformation enables the transformation of a varactor capacitance into negative varactor partially canceling the capacitance of the differential pair. This enables the transmission line resonator to be longer and have a higher impedance. Design criterion for achieving negative varactor is also presented, and design issues of millimeter wave voltage controlled oscillators are discussed. The voltage controlled oscillator is fabricated in 90 nm CMOS technology and achieves a phase noise of -109 dBc/Hz at 10 MHz offset with 13 mW power consumption from a 1.2 V power supply.
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