基于CMOS的非晶硅光子二极管的高性能集成温度传感器

2016 4th International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS) Pub Date : 2016-11-29 DOI:10.5220/0005744903690372

S. Rao, G. Pangallo, Francesco Delia Corte

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引用次数: 1

摘要

提出了一种基于光子层集成氢化非晶硅p-i-n二极管的温度传感器。在30°C到170°C的范围内，正偏二极管上的电压降与温度的线性关系已被用于热感测。在偏置电流≈34-40 nA范围内测量到11.9 mV/°C的高灵敏度。

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High perfomance integrated temperature sensor based on amorphous silicon diode for photonics on CMOS

A temperature sensor based on a photonic layer-integrated hydrogenated amorphous silicon p-i-n diode is presented. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in a biasing current range ≈34–40 nA has been measured.

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2016 4th International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS)

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