具有12.1 dB增益和5.456 dB NF的低噪声放大器，适用于GaAs 0.15μm pHEMT工艺的v波段应用

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401599

Chih-Chen Chang, Yen-Chung Chiang

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引用次数: 7

摘要

本文介绍了一种专为v波段应用而设计的两级低噪声放大器。这两个阶段都是具有最小化噪声系数(NF)的归纳退化结构的公共源-公共门级联拓扑结构。该放大器采用GaAs 0.15μm pHEMT工艺实现，在56.8 GHz频率下，峰值增益为12.1 dB, NF为5.456 dB，输入P1dB为-20 dBm。3dB带宽从54.9 GHz到58 GHz。该LNA在1.8V电压下的功耗为26.6 mW。

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Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process

In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15μm pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.

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2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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