{"title":"通过数学建模和仿真对某些电力电子开关及其器件的控制范围确定和性能分析进行比较研究","authors":"Y. Singh, P. S. Bimbhra","doi":"10.1109/PEDS.2003.1283177","DOIUrl":null,"url":null,"abstract":"This paper, contains for the first time, certain results and data for the switches and devices behavior. The power electronic switches viz. silicon controlled rectifier (SCR), metal oxide semiconductor field effect transistor (MOSFET), gate turn-off thyristor (GTO), MOS controlled thyristor (MCT), insulated gate bipolar transistor (IGBT) and TRIAC have been analyzed for their converter operational losses, thermal sensitivity, switching time characteristics, filter design and snubber requirements, harmonic analysis etc. The results show a comparative analysis among the various switches, for their and switch based devices behavior, leading to their proper selection in the specific applications. Further, the plots give information regarding the device behavior, which necessitates the linear and nonlinear compensation for accurate output and robust behavior of the switch and its device circuit.","PeriodicalId":106054,"journal":{"name":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Control range determination and performance analysis of some power electronic switches and their devices through mathematical modeling and simulation: a comparative study\",\"authors\":\"Y. Singh, P. S. Bimbhra\",\"doi\":\"10.1109/PEDS.2003.1283177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper, contains for the first time, certain results and data for the switches and devices behavior. The power electronic switches viz. silicon controlled rectifier (SCR), metal oxide semiconductor field effect transistor (MOSFET), gate turn-off thyristor (GTO), MOS controlled thyristor (MCT), insulated gate bipolar transistor (IGBT) and TRIAC have been analyzed for their converter operational losses, thermal sensitivity, switching time characteristics, filter design and snubber requirements, harmonic analysis etc. The results show a comparative analysis among the various switches, for their and switch based devices behavior, leading to their proper selection in the specific applications. Further, the plots give information regarding the device behavior, which necessitates the linear and nonlinear compensation for accurate output and robust behavior of the switch and its device circuit.\",\"PeriodicalId\":106054,\"journal\":{\"name\":\"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDS.2003.1283177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.2003.1283177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Control range determination and performance analysis of some power electronic switches and their devices through mathematical modeling and simulation: a comparative study
This paper, contains for the first time, certain results and data for the switches and devices behavior. The power electronic switches viz. silicon controlled rectifier (SCR), metal oxide semiconductor field effect transistor (MOSFET), gate turn-off thyristor (GTO), MOS controlled thyristor (MCT), insulated gate bipolar transistor (IGBT) and TRIAC have been analyzed for their converter operational losses, thermal sensitivity, switching time characteristics, filter design and snubber requirements, harmonic analysis etc. The results show a comparative analysis among the various switches, for their and switch based devices behavior, leading to their proper selection in the specific applications. Further, the plots give information regarding the device behavior, which necessitates the linear and nonlinear compensation for accurate output and robust behavior of the switch and its device circuit.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
