R. Ben Yishay, R. Carmon, O. Katz, B. Sheinman, D. Elad
{"title":"一种采用SiGe BiCMOS技术的20dBm e波段功率放大器","authors":"R. Ben Yishay, R. Carmon, O. Katz, B. Sheinman, D. Elad","doi":"10.23919/EUMC.2012.6459375","DOIUrl":null,"url":null,"abstract":"This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA's bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 20dBm E-band power amplifier in SiGe BiCMOS technology\",\"authors\":\"R. Ben Yishay, R. Carmon, O. Katz, B. Sheinman, D. Elad\",\"doi\":\"10.23919/EUMC.2012.6459375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA's bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMC.2012.6459375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20dBm E-band power amplifier in SiGe BiCMOS technology
This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA's bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
